onsemi

Silicon Carbide (SiC) Cascode JFETs

ONSemi JFETs are available in both through-hole and surface mount packages

Image of ONSemi SiC Cascode JFETs ONSemi high-performance SiC cascode JFETs deliver excellent switching speed, lower switching losses, and higher efficiency. They provide high switching frequency and deliver ultra-low on-resistance (RDS(ON)) starting at just 5 mΩ, utilizing less than half the die size of any other technology. The JFETs are available in both standard through-hole (including Kelvin) and surface mount packages, offering excellent cost-effectiveness. These devices utilize a unique cascode configuration, integrating a high-performance SiC fast JFET with a cascode-optimized Si MOSFET. This innovative approach enables standard gate drive (0 to 12 V) for SiC devices. Given their smaller die size and compatibility with existing driver solutions, the SiC cascode JFETs offer optimized system performance and cost structure.

Features
  • Ultra-low RDS(ON)
  • Maximum operating temperature: +175°C
  • Excellent reverse recover
  • Low gate charge
Applications
  • EV charging
  • PV inverters
  • Power factor correction units
  • Motor drives
  • Induction heating

Silicon Carbide (SiC) Cascode JFETs

ImagemNúmero de peça do fabricanteDescriçãoAvailable QuantityPreçoVer detalhes
SICFET N-CH 1200V 7.6A D2PAK-7UF3C120400B7SSICFET N-CH 1200V 7.6A D2PAK-73284 - Immediate$8.65Ver detalhes
SICFET N-CH 1700V 7.6A D2PAK-7UF3C170400B7SSICFET N-CH 1700V 7.6A D2PAK-73227 - Immediate$10.63Ver detalhes
SICFET N-CH 750V 28A TO247-3UJ4C075060K3SSICFET N-CH 750V 28A TO247-314753 - Immediate
17400 - Factory Stock		$14.41Ver detalhes
SICFET N-CH 750V 28A TO247-4UJ4C075060K4SSICFET N-CH 750V 28A TO247-4305 - Immediate
6600 - Factory Stock		$12.31Ver detalhes
1200V/70MOHM, SIC, FAST CASCODE,UF4C120070K3S1200V/70MOHM, SIC, FAST CASCODE,708 - Immediate
3000 - Factory Stock		$13.15Ver detalhes
MOSFET N-CH 650V 54A TO247-3UF3C065040K3SMOSFET N-CH 650V 54A TO247-31190 - Immediate
4800 - Factory Stock		$18.24Ver detalhes
750V/44MOHM, SIC, CASCODE, G4, TUJ4C075044K4S750V/44MOHM, SIC, CASCODE, G4, T329 - Immediate
4800 - Factory Stock		$13.92Ver detalhes
750V/33MOHM, SIC, CASCODE, G4, TUJ4C075033K4S750V/33MOHM, SIC, CASCODE, G4, T2732 - Immediate$15.06Ver detalhes
750V/23MOHM, SIC, CASCODE, G4, TUJ4C075023K4S750V/23MOHM, SIC, CASCODE, G4, T465 - Immediate
14400 - Factory Stock		$11.53Ver detalhes
SICFET N-CH 1200V 28.8A D2PAK-7UF3C120080B7SSICFET N-CH 1200V 28.8A D2PAK-71409 - Immediate
800 - Factory Stock		$17.97Ver detalhes
SICFET N-CH 1200V 33A TO247-3UJ3C120080K3SSICFET N-CH 1200V 33A TO247-33982 - Immediate$19.79Ver detalhes
SICFET N-CH 750V 81A TO247-3UJ4C075018K3SSICFET N-CH 750V 81A TO247-34044 - Immediate$12.70Ver detalhes
MOSFET N-CH 650V 65A TO263UJ3C065030B3MOSFET N-CH 650V 65A TO2633386 - Immediate
11200 - Factory Stock		$23.62Ver detalhes
MOSFET N-CH 650V 85A TO247-3UJ3C065030K3SMOSFET N-CH 650V 85A TO247-32902 - Immediate
4500 - Factory Stock		$24.10Ver detalhes
SICFET N-CH 750V 53A TOLLUJ4SC075018L8SSICFET N-CH 750V 53A TOLL920 - Immediate
34000 - Factory Stock		$20.24Ver detalhes
750V/18MOHM, N-OFF SIC STACK CASUJ4SC075018B7S750V/18MOHM, N-OFF SIC STACK CAS961 - Immediate
12800 - Factory Stock		$21.26Ver detalhes
MOSFET N-CH 650V 65A TO263UF3C065030B3MOSFET N-CH 650V 65A TO2632307 - Immediate
6400 - Factory Stock		$23.62Ver detalhes
SICFET N-CH 750V 81A TO247-4UJ4C075018K4SSICFET N-CH 750V 81A TO247-4650 - Immediate$21.89Ver detalhes
MOSFET N-CH 650V 85A TO220-3UJ3C065030T3SMOSFET N-CH 650V 85A TO220-30 - Immediate$23.98Ver detalhes
SICFET N-CH 1200V 65A TO247-4UF3C120040K4SSICFET N-CH 1200V 65A TO247-41038 - Immediate
9000 - Factory Stock		$27.58Ver detalhes
Published: 2025-07-25

Related Product Highlight

Gen 4 1200 V SiC FETs for 800 V Bus Applications onsemi UF4C/SC Generation 4 SiC FET series is based on a unique cascode configuration, rated at 1200 V, and available in 23 mΩ to 70 mΩ options.
Gen 4 750 V SiC FETs Help Deliver Next-Generation Power Designs onsemi Generation 4 SiC FET is rated at 750 V while delivering figures of merit that lower conduction losses and increase efficiency at higher speed.
UF3SC SiC FETs with <10 mΩ RDS(on) onsemi UF3SC SiC FETs with RDS(on) values of 7 mΩ at 650 V and 9 mΩ at 1200 V feature industry-standard TO247 3- and 4-lead kelvin packages.

Related Articles and Blogs

Os semicondutores de ampla banda proibida estão remodelando o mundo dos transportes Todo o setor de transporte está passando por uma transformação radical com soluções para carros elétricos e híbridos e transporte de massa mais limpo.
Semicondutores de ampla banda proibida em aplicações aeroespaciais e de satélite Os semicondutores de ampla banda proibida trazem várias vantagens na conversão de energia, tais como maior densidade de potência e eficiência, reduzindo o tamanho e peso do sistema.