CoolSiC™ G2 1200 V Silicon Carbide MOSFET Discretes

Infineon silicon carbide (SiC) CoolSiC MOSFETs are built on a state-of-the-art trench semiconductor process optimized to allow for both the lowest losses in an application and the highest reliability in operation. The discrete CoolSiC MOSFET portfolio comes in 650 V, 750 V, 1,200 V, 1,700 V, and 2,000 V classes, with on-resistance ratings from 7 mΩ up to 1,000 mΩ. CoolSiC trench technology enables a flexible parameter set to implement application-specific features in respective product portfolios such as gate-source voltages, avalanche specification, short-circuit capability, or internal body diodes rated for hard commutation.

Discrete CoolSiC 1,200 V G2 MOSFETs are currently offered in three different packages, all building on the strengths of Generation 1 technology with significant improvement that provides an advanced solution for more cost-optimized, efficient, compact, easy-to-design, and reliable systems. Generation 2 significantly improves key figures-of-merit for both hard-switching and soft-switching topologies and is suitable for all common combinations of AC/DC, DC/DC, and DC/AC stages.

Two TO-247 4-pin package variants (the standard TO-247 4-pin package and a TO-247 4-pin HC package) are available for customers to select from based on their design needs. The TO-247 4-pin offers increased creepage distance, thin signal leads, and Kelvin pins to prevent solder bridging, as well as an optimized thermal interface material (TIM) area for superior thermal performance. The standard TO-247-4 package allows for pin compatibility with the majority of package offerings in the market. Devices in the TO-263-7 (D²PAK-7L) package are also available, suitable for high-power applications, and designed for low on-resistance and high-speed switching MOSFETs. The TO-263-7 package provides <7 mm creepage and clearance distance and minimizes isolation effort in the PCB design.

The top-side cooled Q-DPAK introduces a new era in cooling, energy efficiency, design flexibility, and performance and is specifically designed for wide use in industrial applications. CoolSiC MOSFET G2 devices in Q-DPAK provide customers with a reduced system cost by enabling easier assembly with outstanding thermal performance. Compared to bottom-side cooled solutions, top-side cooled devices enable a more optimized PCB layout, which in turn reduces the effects of parasitic components and stray inductances while also providing enhanced thermal management capabilities. The Q-DPAK package is available as both dual half-bridge and single-switch MOSFET.

The REF-DR3KIMBGSIC2MA SiC reference design consists of two PCBs, including a driver circuit and a three-phase inverter for servo motors and drives. Benefits include high power density, passive cooling without cooling fans, and an ultra-small footprint with a PCB diameter of only 110 mm. Access the Infineon-specific Reference Design Library by clicking here.