VideoLibrary

Gallium Nitride (GaN): Mass Production GaNFast Chargers

A review of some of the more than 135 GaNFast chargers and adapters in mass production, from 20W to 300W and from tier-1 customers including Dell, Lenovo, Xiaomi, OPPO, Belkin and many more. Presented by David Carroll, Sr VP Worldwide Sales.

6/15/2022 2:39:37 PM

Part List

ImagemNúmero de peça do fabricanteDescriçãoAvailable QuantityPreçoVer detalhes
MOSFET IPM 650V 5A 8-PWRVDFNNV6113MOSFET IPM 650V 5A 8-PWRVDFN1029 - Immediate$3.07Ver detalhes
MOSFET IPM 650V 5A 8-PWRVDFNNV6113-RAMOSFET IPM 650V 5A 8-PWRVDFN1029 - Immediate$3.07Ver detalhes
MOSFET IPM 650V 8A 8-PWRVDFNNV6115MOSFET IPM 650V 8A 8-PWRVDFN945 - Immediate$4.02Ver detalhes
MOSFET IPM 650V 8A 8-PWRVDFNNV6115-RAMOSFET IPM 650V 8A 8-PWRVDFN1274 - Immediate$4.01Ver detalhes
MOSFET IPM 650V 12A 8-PWRVDFNNV6117MOSFET IPM 650V 12A 8-PWRVDFN868 - Immediate$5.90Ver detalhes
MOSFET IPM 650V 12A 8-PWRVDFNNV6117-RAMOSFET IPM 650V 12A 8-PWRVDFN955 - Immediate$5.90Ver detalhes
MOSFET IPM 650V 5A 30-PWRVQFNNV6123MOSFET IPM 650V 5A 30-PWRVQFN1060 - Immediate$3.07Ver detalhes
MOSFET IPM 650V 5A 30-PWRVQFNNV6123-RAMOSFET IPM 650V 5A 30-PWRVQFN1635 - Immediate$3.07Ver detalhes

Related Videos

GaNFast Power ICs Reach New Heights
GaNFast Power ICs Reach New Heights

Publish Date: 2022-06-15

Gallium Nitride (GaN): Are you GaNFast?
Gallium Nitride (GaN): Are you GaNFast?

Publish Date: 2022-06-15

GaNFast™ Architecture, Performance in High-Power Systems
GaNFast™ Architecture, Performance in High-Power Systems

Publish Date: 2022-06-15

Related Product Highlight

GaNFast™ 650 V Single Power ICs Navitas GaNFast™ power ICs have an easy-to-use digital input, power output, and high-frequency powertrain.
NV6115 650 V Single GaNFast™ Power IC (170 mΩ) Navitas’ NV6115 ICs extend the capabilities of traditional topologies such as flyback, half-bridge, resonant, and more.
NV6117 650 V Single GaNFast™ Power IC (120 mΩ) Navitas' NV6117 GaNFast power IC extends the capabilities of traditional topologies and applies GaN technology to enable dependable breakthrough designs.