GaNFast™ 650 V Single Power ICs

Product Highlights > GaNFast™ 650 V Single Power ICs

            GaNFast™ 650 V Single Power ICs
                    Navitas’ power ICs in 120 mΩ, 170 mΩ, and 300 mΩ are optimized for high-frequency, soft-switching topologies
    

Image of Navitas' GaNFast™ 650 V Power IC Navitas GaNFast power ICs have an easy-to-use digital input, power output, and high-frequency powertrain. The monolithic integration of a field-effect transistor (FET), drive, and logic creates a high-performance building block enabling designers to create a fast, small, and efficient integrated powertrain.

The high dV/dt immunity, high-speed integrated drive, and industry standard low-profile, low-inductance, 5 mm x 6 mm SMT QFN package allow designers to exploit Navitas' gallium nitride (GaN) technology with simple, quick, and dependable solutions for breakthrough power density and efficiency. These ICs extend the capabilities of traditional topologies including flyback, half-bridge, resonant, and more to MHz+, enabling the commercial introduction of breakthrough designs.

Features

Monolithically-integrated gate drive
Wide logic input range with hysteresis
5 V / 15 V input compatible
Wide V_CC range: 10 V to 30 V
Programmable turn-on dV/dt
200 V/ns dV/dt immunity
650 V eMode GaN FET

Low 120 mΩ, 170 mΩ, and 300 mΩ resistances available
2 MHz operation
Small, low-profile SMT QFN package

5 mm x 6 mm footprint, 0.85 mm profile
Minimized package inductance

RoHS, Pb-free, and REACH compliant

Applications

AC/DC, DC/DC, and DC/AC
Buck, boost, half bridge, and full bridge
Active clamp flybacks, LLC resonant, and class D
Mobile fast chargers and adapters

Notebook adapters
LED lighting and solar micro-inverters
TV monitors and wireless power
Servers, telecom, and networking SMPS