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Silicon Carbide Schottky Diode
Silicon Carbide Power Schottky diodes from GeneSiC Semiconductor
GeneSiC Semiconductor introduces their Silicon Carbide Power Schottky diode. The advantage of these products is improved circuit efficiency (lower overall cost), low switching losses, ease of paralleling devices without thermal runaway, smaller heat sink requirements, low reverse recovery current, low device capacitance, and low reverse leakage current at operating temperature. At 1200 V, customers have a wide range of amperages and package sizes. These products are RoHS compliant.
Features
- 1200 V Schottky rectifier
- 175°C maximum operating temperature
- Temperature independent switching behavior
- Superior surge current capability
- Positive temperature coefficient of Vf
- Extremely fast switching speeds
- Superior figure of merit Qc/If
Applications
- Power factor correction (PFC)
- Switched-mode power supply (SMPS)
- Solar inverters
- Wind turbine inverters
- Motor drives
- Induction heating
- Uninterruptible power supply (UPS)
- High voltage mulipliers
Arrays
| Imagem | Número de peça do fabricante | Descrição | Available Quantity | Preço | ||
|---|---|---|---|---|---|---|
 |  | GB2X50MPS17-227 | DIODE MOD SIC 1700V 136A SOT-227 | 0 - Immediate | $94.84 | Ver detalhes |
|  | GC2X20MPS12-247 | DIODE ARR SIC 1200V 90A TO247-3 | 0 - Immediate | $14.03 | Ver detalhes |
| | GE2X8MPS06D | DIODE ARRAY SIC 650V 19A TO247-3 | 38 - Immediate | $8.01 | Ver detalhes |
Single
| Imagem | Número de peça do fabricante | Descrição | Available Quantity | Preço | Ver detalhes | |
|---|---|---|---|---|---|---|
|  | GB02SLT12-214 | DIODE SIL CARB 1200V 2A DO214AA | 0 - Immediate | $5.75 | Ver detalhes |
| | GAP3SLT33-214 | DIODE SIC 3.3KV 300MA DO214AA | 2109 - Immediate | $18.46 | Ver detalhes |
|  | GB05MPS33-263 | DIODE SIL CARB 3300V 14A TO2637 | 13 - Immediate | $38.82 | Ver detalhes |
Updated: 2019-02-19
Published: 2013-02-05
Brasil