ADPA7005 Power Amplifier

ADI's ADPA7005 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transfer (pHEMT), monolithic microwave integrated circuit (MMIC), 32 dBm saturated output power (P_SAT), >1 W, power amplifier. It has an integrated temperature compensated, on-chip power detector that operates between 18 GHz and 44 GHz. The ADPA7005 provides 15.5 dB of small signal gain and approximately 32 dBm of P_SAT at 32 GHz from a 5 V supply (see Figure 26 in the data sheet). The ADPA7005 has an output IP3 of 40 dBm between 24 GHz to 34 GHz and is ideal for linear applications such as electronic countermeasure and instrumentation applications requiring >30 dBm of efficient P_SAT. The RF input and outputs are internally matched and dc blocked for ease of integration into higher-level assemblies. The ADPA7005 is packaged in a 7 mm × 7 mm, 18 terminal ceramic leadless chip carrier with heat sink (LCC_HS) that exhibits low thermal resistance and is compatible with surface-mount manufacturing techniques.

The evaluation board ADPA7005-EVALZ consists of a two-layer printed circuit board (PCB) fabricated from a 10-mil thick, Rogers 4350B, copper clad mounted to an aluminum heat sink. The heat sink provides thermal relief to the device and mechanical support to the PCB. Mounting holes on the heat sink allow attachment to larger heat sinks for improved thermal management. The RFIN and RFOUT ports on the ADPA7005-EVALZ are populated by 2.9 mm, female coaxial connectors. The respective RF traces have a 50 Ω characteristic impedance. The power voltages, ground voltages, gate control voltages, and detector output voltages are accessed through two 8-pin headers.