SIHG40N60E-GE3 is out of stock and can be placed on backorder.
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N-Channel 600 V 40A (Tc) 329W (Tc) Through Hole TO-247AC
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SIHG40N60E-GE3

DigiKey Part Number
SIHG40N60E-GE3-ND
Manufacturer
Manufacturer Product Number
SIHG40N60E-GE3
Description
MOSFET N-CH 600V 40A TO247AC
Manufacturer Standard Lead Time
22 Weeks
Customer Reference
Detailed Description
N-Channel 600 V 40A (Tc) 329W (Tc) Through Hole TO-247AC
Datasheet
 Datasheet
Product Attributes
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Category
Vgs(th) (Max) @ Id
4V @ 250µA
Mfr
Gate Charge (Qg) (Max) @ Vgs
197 nC @ 10 V
Series
Vgs (Max)
±30V
Packaging
Tube
Input Capacitance (Ciss) (Max) @ Vds
4436 pF @ 100 V
Part Status
Active
Power Dissipation (Max)
329W (Tc)
FET Type
Operating Temperature
-55°C ~ 150°C (TJ)
Technology
Mounting Type
Through Hole
Drain to Source Voltage (Vdss)
600 V
Supplier Device Package
TO-247AC
Current - Continuous Drain (Id) @ 25°C
Package / Case
Drive Voltage (Max Rds On, Min Rds On)
10V
Base Product Number
Rds On (Max) @ Id, Vgs
75mOhm @ 20A, 10V
Environmental & Export Classifications
Product Questions and Answers
Additional Resources
Substitutes (6)
Part NumberManufacturerQuantity AvailableDigiKey Part NumberUnit PriceSubstitute Type
FCH077N65F-F155onsemi201FCH077N65F-F155-ND$11.03000Similar
IXFX64N60PIXYS759IXFX64N60P-ND$25.00000Similar
TK31N60W,S1VFToshiba Semiconductor and Storage0TK31N60WS1VF-ND$12.74000Similar
TSM60NE048PW C0GTaiwan Semiconductor Corporation3001801-TSM60NE048PWC0G-ND$15.53000Similar
TSM60NE069PW C0GTaiwan Semiconductor Corporation2951801-TSM60NE069PWC0G-ND$12.26000Similar
In-Stock: 0
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All prices are in USD
Tube
QuantityUnit PriceExt Price
1$8.59000$8.59
25$5.11440$127.86
100$4.28640$428.64
500$3.62428$1,812.14
1,000$3.44375$3,443.75
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.