Name: TK31N60W,S1VF
Brand: Toshiba Semiconductor and Storage
SKU: TK31N60WS1VF-ND
Price: 12.74 USD
Availability: OutOfStock

TK31N60W,S1VF is out of stock and can be placed on backorder.

Available Substitutes:

Direct

Vishay Siliconix

In Stock: 0

Unit Price: $7.73000

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onsemi

In Stock: 0

Unit Price: $0.00000

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IXYS

In Stock: 5,150

Unit Price: $12.09000

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TK31N60W,S1VF
DigiKey Part Number	TK31N60WS1VF-ND
Manufacturer	Toshiba Semiconductor and Storage
Manufacturer Product Number	TK31N60W,S1VF
Description	MOSFET N CH 600V 30.8A TO247
Manufacturer Standard Lead Time	16 Weeks
Customer Reference
Detailed Description	N-Channel 600 V 30.8A (Ta) 230W (Tc) Through Hole TO-247
Datasheet	Datasheet
EDA/CAD Models	TK31N60W,S1VF Models

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 3.7V @ 1.5mA
Mfr Toshiba Semiconductor and Storage	Gate Charge (Qg) (Max) @ Vgs 86 nC @ 10 V
Series DTMOSIV	Vgs (Max) ±30V
Packaging Tube	Input Capacitance (Ciss) (Max) @ Vds 3000 pF @ 300 V
Part Status Active	Power Dissipation (Max) 230W (Tc)
FET Type N-Channel	Operating Temperature 150°C (TJ)
Technology MOSFET (Metal Oxide)	Mounting Type Through Hole
Drain to Source Voltage (Vdss) 600 V	Supplier Device Package TO-247
Current - Continuous Drain (Id) @ 25°C 30.8A (Ta)	Package / Case TO-247-3
Drive Voltage (Max Rds On, Min Rds On) 10V	Base Product Number TK31N60
Rds On (Max) @ Id, Vgs 88mOhm @ 15.4A, 10V

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Substitutes (3)

Part Number	Manufacturer	Quantity Available	DigiKey Part Number	Unit Price	Substitute Type
SIHG35N60E-GE3	Vishay Siliconix	0	SIHG35N60E-GE3-ND	$7.73000	Direct
FCH35N60	onsemi	0	FCH35N60-ND	$0.00000	Similar
IXFH46N65X2	IXYS	5,150	238-IXFH46N65X2-ND	$12.09000	Similar