N-Channel 650 V 64A (Tc) 520W (Tc) Through Hole TO-247AD
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SIHW61N65EF-GE3

DigiKey Part Number
SIHW61N65EF-GE3-ND
Manufacturer
Manufacturer Product Number
SIHW61N65EF-GE3
Description
MOSFET N-CH 650V 64A TO247AD
Manufacturer Standard Lead Time
28 Weeks
Customer Reference
Detailed Description
N-Channel 650 V 64A (Tc) 520W (Tc) Through Hole TO-247AD
Datasheet
 Datasheet
Product Attributes
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Category
Vgs(th) (Max) @ Id
4V @ 250µA
Mfr
Gate Charge (Qg) (Max) @ Vgs
371 nC @ 10 V
Series
Vgs (Max)
±30V
Packaging
Tube
Input Capacitance (Ciss) (Max) @ Vds
7407 pF @ 100 V
Part Status
Active
Power Dissipation (Max)
520W (Tc)
FET Type
Operating Temperature
-55°C ~ 150°C (TJ)
Technology
Mounting Type
Through Hole
Drain to Source Voltage (Vdss)
650 V
Supplier Device Package
TO-247AD
Current - Continuous Drain (Id) @ 25°C
Package / Case
Drive Voltage (Max Rds On, Min Rds On)
10V
Base Product Number
Rds On (Max) @ Id, Vgs
47mOhm @ 30.5A, 10V
Environmental & Export Classifications
Product Questions and Answers
Additional Resources
In-Stock: 480
Check for Additional Incoming Stock
All prices are in USD
Tube
QuantityUnit PriceExt Price
1$15.76000$15.76
10$11.08900$110.89
480$7.62500$3,660.00
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.