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N-Channel 600 V 12A (Tc) 33W (Tc) Through Hole TO-220 Full Pack
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SIHF12N60E-E3

DigiKey Part Number
SIHF12N60E-E3-ND
Manufacturer
Vishay Siliconix
Manufacturer Product Number
SIHF12N60E-E3
Description
MOSFET N-CH 600V 12A TO220
Manufacturer Standard Lead Time
20 Weeks
Customer Reference
Detailed Description
N-Channel 600 V 12A (Tc) 33W (Tc) Through Hole TO-220 Full Pack
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Vishay Siliconix
Series
-
Packaging
Bulk
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
380mOhm @ 6A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
58 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
937 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
33W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-220 Full Pack
Package / Case
TO-220-3 Full Pack
Base Product Number
SIHF12
Product Questions and Answers

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0 In Stock
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Quantity
All prices are in USD
Bulk
QuantityUnit PriceExt Price
1$3.52000$3.52
10$2.29600$22.96
100$1.60180$160.18
500$1.30514$652.57
1,000$1.20984$1,209.84
2,000$1.13750$2,275.00
Manufacturers Standard Package