N-Channel 1200 V 55A (Tc) 244W (Tc) Through Hole PG-TO247-4-17
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N-Channel 1200 V 55A (Tc) 244W (Tc) Through Hole PG-TO247-4-17
CoolSiC™ G2 1200 V Silicon Carbide Discrete MOSFETs from Infineon PIO | DigiKey

IMZC120R034M2HXKSA1

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448-IMZC120R034M2HXKSA1-ND
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IMZC120R034M2HXKSA1
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SICFET N-CH 1200V 55A TO247
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69 Weeks
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N-Channel 1200 V 55A (Tc) 244W (Tc) Through Hole PG-TO247-4-17
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 cms-datasheet
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IMZC120R034M2HXKSA1 Models
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Mfr
Series
Packaging
Tube
Part Status
Active
FET Type
Technology
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
15V, 18V
Rds On (Max) @ Id, Vgs
34mOhm @ 20A, 18V
Vgs(th) (Max) @ Id
5.1V @ 6.4mA
Gate Charge (Qg) (Max) @ Vgs
45 nC @ 18 V
Vgs (Max)
+23V, -7V
Input Capacitance (Ciss) (Max) @ Vds
1510 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
244W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
PG-TO247-4-17
Package / Case
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In-Stock: 445
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Tube
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1$12.54000$12.54
30$7.52133$225.64
120$6.42058$770.47
510$5.66537$2,889.34
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Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.