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Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
IMW65R083M1HXKSA1 | |
|---|---|
DigiKey Part Number | 448-IMW65R083M1HXKSA1-ND |
Manufacturer | |
Manufacturer Product Number | IMW65R083M1HXKSA1 |
Description | SILICON CARBIDE MOSFET, PG-TO247 |
Customer Reference | |
Detailed Description | N-Channel 650 V 24A (Tc) 104W (Tc) Through Hole PG-TO247-3-41 |
Datasheet | Datasheet |
EDA/CAD Models | IMW65R083M1HXKSA1 Models |
Product Attributes
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Category | Vgs(th) (Max) @ Id 5.7V @ 3.3mA |
Mfr | Gate Charge (Qg) (Max) @ Vgs 19 nC @ 18 V |
Series | Vgs (Max) +20V, -2V |
Packaging Tube | Input Capacitance (Ciss) (Max) @ Vds 624 pF @ 400 V |
Part Status Not For New Designs | Power Dissipation (Max) 104W (Tc) |
FET Type | Operating Temperature -55°C ~ 175°C (TJ) |
Technology | Mounting Type Through Hole |
Drain to Source Voltage (Vdss) 650 V | Supplier Device Package PG-TO247-3-41 |
Current - Continuous Drain (Id) @ 25°C | Package / Case |
Drive Voltage (Max Rds On, Min Rds On) 18V | Base Product Number |
Rds On (Max) @ Id, Vgs 111mOhm @ 11.2A, 18V |
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In-Stock: 21
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Quantity
All prices are in USD
Tube
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1 | $9.06000 | $9.06 |
| 30 | $5.21500 | $156.45 |
| 120 | $4.37067 | $524.48 |
| 510 | $3.75194 | $1,913.49 |
| 1,020 | $3.52626 | $3,596.79 |
| 2,010 | $3.34038 | $6,714.16 |
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