Name: AIMZHN120R020M1TXKSA1
Brand: Infineon Technologies
SKU: 448-AIMZHN120R020M1TXKSA1-ND
Price: 29.63 USD
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

AIMZHN120R020M1TXKSA1
DigiKey Part Number	448-AIMZHN120R020M1TXKSA1-ND
Manufacturer	Infineon Technologies
Manufacturer Product Number	AIMZHN120R020M1TXKSA1
Description	SIC_DISCRETE
Manufacturer Standard Lead Time	61 Weeks
Customer Reference
Detailed Description	N-Channel 1200 V 100A (Tc) 429W (Tc) Through Hole PG-TO247-4-14
Datasheet	Datasheet

Product Attributes

Filter Similar Products

Show Empty Attributes

Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Gate Charge (Qg) (Max) @ Vgs 82 nC @ 20 V
Mfr Infineon Technologies	Vgs (Max) +23V, -5V
Packaging Tube	Input Capacitance (Ciss) (Max) @ Vds 2667 pF @ 800 V
Part Status Active	Power Dissipation (Max) 429W (Tc)
FET Type N-Channel	Operating Temperature -55°C ~ 175°C (TJ)
Technology SiCFET (Silicon Carbide)	Grade Automotive
Drain to Source Voltage (Vdss) 1200 V	Qualification AEC-Q101
Current - Continuous Drain (Id) @ 25°C 100A (Tc)	Mounting Type Through Hole
Drive Voltage (Max Rds On, Min Rds On) 18V, 20V	Supplier Device Package PG-TO247-4-14
Rds On (Max) @ Id, Vgs 25mOhm @ 43A, 20V	Package / Case TO-247-4
Vgs(th) (Max) @ Id 5.1V @ 13.7mA