SMC Diode Solutions

S2M0160120K/D 1,200 V SiC Power MOSFETs

SMC Diode Solutions' MOSFETs offer very low conduction losses and stable switching characteristics over temperature extremes

Image of SMC Diode Solutions' S2M0160120K/D SiC Power MOSFETSMC Diode Solutions' S2M0160120K and S2M0160120D are single SiC power MOSFETs that are packaged in a TO-247-4 case (S2M0160120K) or TO-247-3 case (S2M0160120D). The devices are high-voltage N-channel enhancement-mode MOSFETs with very low total conduction losses and very stable switching characteristics over temperature extremes.

The S2M0160120K/D MOSFETs are ideal for energy-sensitive high-frequency applications in challenging environments.

Features
  • Positive temperature characteristics and easy to parallel
  • Low on-resistance RDS(ON): 175 mΩ (typ.)
  • Fast switching speed and low switching losses
  • Very fast and robust intrinsic body diode
  • Process of non-bright tin electroplating
Applications
  • Electric vehicles (EVs): fast charging modules and onboard chargers
  • Solar inverters
  • Online UPS and industrial UPS
  • Switch mode power supplies (SMPS)
  • DC/DC converters
  • Energy storage systems (ESS)

S2M0160120K/D SiC Power MOSFETs

ImageManufacturer Part NumberDescriptionQualificationMounting TypeAvailable QuantityPriceView Details
MOSFET SILICON CARBIDE SIC 1200VS2M0160120KMOSFET SILICON CARBIDE SIC 1200V-Through Hole294 - Immediate$5.62View Details
MOSFET SILICON CARBIDE SIC 1200VS2M0160120DMOSFET SILICON CARBIDE SIC 1200V-Through Hole240 - Immediate$5.22View Details
Published: 2024-05-14